MPS2907 transistor (pnp) features power dissipation p cm : 0.625 w (tamb=25 ) collector current i cm : -0.6 a collector-base voltage v (br)cbo : -60 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic= -10a, i e =0 -60 v collector-emitter breakdown voltage v(br) ceo i c = -10 ma , i b =0 -40 v emitter-base breakdown voltage v(br) ebo i e = -10a, i c =0 -5 v collector cut-off current i cbo v cb = -50v, i e =0 -0.1 a collector cut-off current i ceo v ce = -35v, i b =0 -0.1 a emitter cut-off current i ebo v eb = -3 v, i c =0 -0.1 a h fe(1) v ce =-10v, i c = -150ma 100 300 dc current gain h fe(2) v ce =-10v, i c = -1ma 60 collector-emitter saturation voltage v ce(sat) i c =-500 ma, i b =-50 ma -1 v base-emitter saturation voltage v be(sat) i c = -500ma, i b =-50 ma -2 v transition frequency f t v ce =-20 v, i c = -50ma f = 100mhz 200 mhz classification of h fe(1) rank l h range 100-200 200-300 1 2 3 to-92 1. emitter 2. base 3. collector MPS2907 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
|
